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Transistor
2SC3937
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.10.1
s Features
q q q q
0.425
1.250.1
0.425
Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.00.2
1.30.1
0.65
3
2
0.2
0.90.1
(Ta=25C)
Ratings 15 10 2 80 150 150 -55 ~ +150 Unit V V V mA mW C C
0.70.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
0 to 0.1
0.20.1
1:Base 2:Emitter 3:Collector
EIAJ:SC-70 S-Mini Type Package
Marking symbol : 2W
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Noise figure Maximum unilateral power gain Foward transfer gain
(Ta=25C)
Symbol ICBO IEBO hFE1 hFE2 fT Cob NF GUM | S21e |2 Conditions VCB = 15V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 1V, IC = 3mA VCE = 8V, IC = 20mA, f = 800MHz VCE = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 7mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 50 80 6 0.7 1 14 13 1.2 1.7 150 min typ max 1 1 300 280 GHz pF dB dB dB Unit A A
0.15-0.05
+0.1
0.3-0
+0.1
1
Transistor
PC -- Ta
240 60 IB=400A 200 50 Ta=25C 350A 300A 40 250A 200A 30 150A 20 100A 50A 100
2SC3937
IC -- VCE
120 VCE=8V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
160
80 Ta=75C 60
25C -25C
120
80
40
40
10
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 Ta=75C, 25C, -25C 0.3 0.03 0.01 0.1 IC/IB=10 600
hFE -- IC
12 VCE=8V
fT -- IC
VCE=8V f=800MHz Ta=25C
Forward current transfer ratio hFE
500
Transition frequency fT (GHz)
30 100
10
400 Ta=75C 300 25C 200 -25C 100
8
6
4
2
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
GUM -- IC
Maximum unilateral power gain GUM (dB)
24 VCE=8V f=800MHz Ta=25C 6
NF -- IC
VCE=8V (Rg=50) f=800MHz Ta=25C
2.4
2.0
20
5
1.6
16
Noise figure NF (dB)
0.3 1 3 10 30 100
4
1.2
12
3
0.5
8
2
0.4
4
1
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2

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